Dislocation structure and relaxation kinetics in InGaAs/GaAs heteroepitaxy
Identifieur interne : 00E280 ( Main/Repository ); précédent : 00E279; suivant : 00E281Dislocation structure and relaxation kinetics in InGaAs/GaAs heteroepitaxy
Auteurs : RBID : Pascal:02-0282980Descripteurs français
- Pascal (Inist)
- 6860B, 6855L, 6172F, 6837L, 8115H, 6855J, 6172L, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Couche épitaxique semiconductrice, Croissance semiconducteur, Epitaxie jet moléculaire, Relaxation contrainte, Multiplication dislocation, Contrainte interne, Microscopie électronique transmission, Dislocation coin, Densité dislocation, Structure dislocation.
English descriptors
- KwdEn :
- Dislocation density, Dislocation multiplication, Dislocation structure, Edge dislocations, Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Internal stresses, Molecular beam epitaxy, Semiconductor epitaxial layers, Semiconductor growth, Stress relaxation, Transmission electron microscopy.
Abstract
In situ real-time stress monitoring is used to study the kinetics of stress relaxation during molecular beam epitaxy growth of strained thin films of InxGa1-xAs/GaAs. We present measurements of the temperature-dependent relaxation behavior obtained at 443 and 469°C. To study the relationship between the dislocation structure and the stress relaxation, samples were grown to different thicknesses for transmission electron microscopy (TEM) analysis. The combination of the information from the real-time stress monitoring and observations from TEM provides insight into the mechanisms of stress relaxation. © 2002 American Vacuum Society.
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Chason</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Box D, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Box D, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Beresford, R" uniqKey="Beresford R">R. Beresford</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Box D, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Box D, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Chen, E B" uniqKey="Chen E">E. B. Chen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Box D, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Box D, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Paine, D C" uniqKey="Paine D">D. C. Paine</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering, Brown University, Box D, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering, Brown University, Box D, Providence</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0282980</idno><date when="2002-05">2002-05</date><idno type="stanalyst">PASCAL 02-0282980 AIP</idno><idno type="RBID">Pascal:02-0282980</idno><idno type="wicri:Area/Main/Corpus">00F281</idno><idno type="wicri:Area/Main/Repository">00E280</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science and technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Dislocation density</term><term>Dislocation multiplication</term><term>Dislocation structure</term><term>Edge dislocations</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Internal stresses</term><term>Molecular beam epitaxy</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Stress relaxation</term><term>Transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6860B</term><term>6855L</term><term>6172F</term><term>6837L</term><term>8115H</term><term>6855J</term><term>6172L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Couche épitaxique semiconductrice</term><term>Croissance semiconducteur</term><term>Epitaxie jet moléculaire</term><term>Relaxation contrainte</term><term>Multiplication dislocation</term><term>Contrainte interne</term><term>Microscopie électronique transmission</term><term>Dislocation coin</term><term>Densité dislocation</term><term>Structure dislocation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In situ real-time stress monitoring is used to study the kinetics of stress relaxation during molecular beam epitaxy growth of strained thin films of In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs. We present measurements of the temperature-dependent relaxation behavior obtained at 443 and 469°C. To study the relationship between the dislocation structure and the stress relaxation, samples were grown to different thicknesses for transmission electron microscopy (TEM) analysis. 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We present measurements of the temperature-dependent relaxation behavior obtained at 443 and 469°C. To study the relationship between the dislocation structure and the stress relaxation, samples were grown to different thicknesses for transmission electron microscopy (TEM) analysis. 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